IndiumV3, Main, Repository, bibRecord, 002130

EFECTOS ESTRUCTURALES EN EL SEMICONDUCTOR INSB, POR LA APLICACIÓN DE DIFERENTES MÉTODOS DE PRESIÓN

Identifieur interne : 002130 ( Main/Repository ); précédent : 002129; suivant : 002131

EFECTOS ESTRUCTURALES EN EL SEMICONDUCTOR INSB, POR LA APLICACIÓN DE DIFERENTES MÉTODOS DE PRESIÓN

Auteurs : RBID : Pascal:13-0053597

Descripteurs français

Pascal (Inist)
- Pression hydrostatique, Phonon, Contact mécanique, Semiconducteur, Microstructure, Haute pression, Antimoniure d'indium, Longueur onde, Indentation, Analyse chimique, Transformation phase, Traitement image, Analyse structurale, Essai mécanique, Essai dureté, Tomographie, Spectrométrie Raman, Indium, ..

English descriptors

KwdEn :
- Chemical analysis, Hardness test, High pressure, Hydrostatic pressure, Image processing, Indentation, Indium, Indium antimonides, Mechanical contact, Mechanical test, Microstructure, Phase transformation, Phonon, Raman spectrometry, Semiconductor materials, Structural analysis, Tomography, Wavelength.

Abstract

This paper studies the modifications suffered by the Indium Antimonnide (InSb), grown in the [100], when subjected to mechanical tests of micro-indentations, high hydrostatic pressure and pressure impact. Tomographic surveying and samples were made by micro-Raman spectroscopy with different wavelengths of excitation light. The shift of the position of the phonons and the emergence of new Raman peaks allow both chemical and structural analysis of the system.

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Pascal:13-0053597

Le document en format XML

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<author><name sortKey="Joya, Miryam R" uniqKey="Joya M">Miryam R. Joya</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Física, Universidad Nacional de Colombia</s1>
<s2>Bogotá</s2>
<s3>COL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Colombie</country>
<wicri:noRegion>Bogotá</wicri:noRegion>
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</author>
<author><name sortKey="Barba, Jose J" uniqKey="Barba J">Jose J. Barba</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Física, Universidad Nacional de Colombia</s1>
<s2>Bogotá</s2>
<s3>COL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Colombie</country>
<wicri:noRegion>Bogotá</wicri:noRegion>
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</author>
<author><name sortKey="Pizani, Paulo S" uniqKey="Pizani P">Paulo S. Pizani</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Departamento de Física, Universidade Federal de São Carlos</s1>
<s2>SP</s2>
<s3>BRA</s3>
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<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 13-0053597 INIST</idno>
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<seriesStmt><idno type="ISSN">0012-7353</idno>
<title level="j" type="abbreviated">Dyna : (Medellín)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical analysis</term>
<term>Hardness test</term>
<term>High pressure</term>
<term>Hydrostatic pressure</term>
<term>Image processing</term>
<term>Indentation</term>
<term>Indium</term>
<term>Indium antimonides</term>
<term>Mechanical contact</term>
<term>Mechanical test</term>
<term>Microstructure</term>
<term>Phase transformation</term>
<term>Phonon</term>
<term>Raman spectrometry</term>
<term>Semiconductor materials</term>
<term>Structural analysis</term>
<term>Tomography</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Pression hydrostatique</term>
<term>Phonon</term>
<term>Contact mécanique</term>
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<term>Antimoniure d'indium</term>
<term>Longueur onde</term>
<term>Indentation</term>
<term>Analyse chimique</term>
<term>Transformation phase</term>
<term>Traitement image</term>
<term>Analyse structurale</term>
<term>Essai mécanique</term>
<term>Essai dureté</term>
<term>Tomographie</term>
<term>Spectrométrie Raman</term>
<term>Indium</term>
<term>.</term>
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<front><div type="abstract" xml:lang="en">This paper studies the modifications suffered by the Indium Antimonnide (InSb), grown in the [100], when subjected to mechanical tests of micro-indentations, high hydrostatic pressure and pressure impact. Tomographic surveying and samples were made by micro-Raman spectroscopy with different wavelengths of excitation light. The shift of the position of the phonons and the emergence of new Raman peaks allow both chemical and structural analysis of the system.</div>
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<fA68 i1="01" i2="1" l="ENG"><s1>STRUCTURAL EFFECTS IN THE SEMICONDUCTOR INSB BY THE APPLICATION OF DIFFERENT METHODS OF PRESSURE</s1>
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<fC01 i1="01" l="ENG"><s0>This paper studies the modifications suffered by the Indium Antimonnide (InSb), grown in the [100], when subjected to mechanical tests of micro-indentations, high hydrostatic pressure and pressure impact. Tomographic surveying and samples were made by micro-Raman spectroscopy with different wavelengths of excitation light. The shift of the position of the phonons and the emergence of new Raman peaks allow both chemical and structural analysis of the system.</s0>
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<s2>NK</s2>
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EFECTOS ESTRUCTURALES EN EL SEMICONDUCTOR INSB, POR LA APLICACIÓN DE DIFERENTES MÉTODOS DE PRESIÓN

EFECTOS ESTRUCTURALES EN EL SEMICONDUCTOR INSB, POR LA APLICACIÓN DE DIFERENTES MÉTODOS DE PRESIÓN

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri